二维材料中范德华间隙对器件微缩的约束

Full article and list of author affiliations: https://doi.org/10.1126/science.aeb2271 Mahdi Pourfath* and Tibor Grasser* INTRODUCTION: As conventional silicon technology approaches its scaling limits, continued transistor miniaturization increasingly depends on strong gate control over the channel. Two-dimensional (2D) semiconductors are therefore attractive because their atomically thin channels can, in principle, be controlled more effectively by the gate. At the same time, scaling requires low leakage through the gate insulator and low electrical resistance at the metal source and drain contacts of the transistor. In practice, however, interfaces formed by 2D materials differ from those in silicon devices and introduce new constraints. …