MoS2生长中的前驱体化学

Lei Liu1†, Yushu Wang1†, Ruikang Dong1†, Dongxu Fan1,2,3†, Si Meng1, Lang Wu1,2, Shengqiang Wu1, Wei Xu1, Mingwei Feng1,2, Ningmu Zou1,2, Qingyu Yan4, Zehua Hu4, Fei Lu4, Shitong Zhu5, Yuan Gao4, Liang Ma1,6, Yi Shi4, Taotao Li1,2,3*, Jinlan Wang1,6*, Xinran Wang1,2,3,4* In this work, we focused on the role of reaction kinetics in improving domain size, growth rate, and film quality. We elucidated the fundamental kinetic bottlenecks limiting the growth of high-quality MoS2 and introduced a new technology, oxygen-assisted MOCVD (oxy-MOCVD), to overcome them. By precisely introducing oxygen to prereact with molybdenum hexacarbonyl [Mo(CO)6] and carbon disulfide (CS2), we generated high-purity molybdenum trioxide (MoO3) and sulfur as reactive intermediates. …