晶圆级超薄均匀范德华铁电氧化物

Qinci Wu†, Zhongrui Li†, Bingchen Han†, Weiyu Sun†, Qinyun Liu†, Chengyuan Xue†, Hyeonhu Bae, Mengdi Wang, Boyang Fu, Jun Qian, Yongchao Zhu, Yu Sun, Tingkai Feng, Xin Gao, Xuzhong Cong, Wanqing Liu, Yunan Gao, Binghai Yan, Congwei Tan, Hongtao Liu*, Hailin Peng* INTRODUCTION: Ferroelectric field-effect transistors (FeFETs) are promising candidates for next-generation embedded nonvolatile memories and computing-in-memory architectures. Wafer-scale production and scaling down the thickness of the ferroelectric layer is essential for achieving high-density and low-power devices. However, producing uniform ferroelectric materials at sub-5-nm dimensions across a wafer remains a major challenge, largely because of performance degradation at atomic scales and interface-induced depolarization effects. RATIONALE: Van der Waals (vdW) ferroelectrics present a potential solution. …