解决铁电缩放三难问题

A robust oxide ferroelectric-semiconductor interface realizes an energy-efficient memory for computing Piush Behera1 and Suraj S. Cheema1,2,3 A rtificial intelligence requires enormous energy to power extensive computation, process complex algorithms, and train models on vast datasets. One promising approach to solving this demand is the ferroelectric field-effect transistor (FeFET), a memory device in which the con- ventional semiconductor gate dielectric—a thin layer separating the gate electrode from the channel that controls current—is replaced by a ferroelectric material (1, 2). FeFETs can reduce data movement by merging processing and storage, offering energy-efficient, ul- trafast computing. …