《科学》 第393卷 第6808期 · 2026年7月16日 · 中文解读
基于量子态操控的鲁棒单电子存储器
Robust single-electron memory with quantum states manipulation · C. Liu et al.
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这篇讲什么
本文报道了一种基于共面漏-沟道-源结构的二维单电子存储器,该器件抑制了边缘电容,在室温下实现了0.5伏的非易失性阈值电压偏移,并验证了两种量子行为及一种量子记忆效应。
原文开头
QUaNtUM eNGiNeeRiNG Robust single- electron memory with quantum states manipulation Chunsen Liu1*†, Yutong Xiang1†, Chong Wang1, Peng Zhou1,2* The ultimate goal of information storage is single- electron memory. Quantum mechanics predicts that two distinguishable quantum states can be realized by confining a single electron within an ultrasmall space. However, scaling down such devices paradoxically amplifies fringe capacitance effects, which hinders the experimental observation of single- electron memory. We report a two- dimensional single- electron memory device based on a coplanar drain- channel- source structure that suppressed fringe capacitance, exhibiting a nonvolatile threshold voltage shift of 0.5 volts after the change of a single electron. Two intriguing quantum behaviors have also been verified regarding the programming voltage. …
摘自《科学》(Science)第393卷 第6808期 · 2026年7月16日,C. Liu et al.。仅引用开头一小段供了解文章,版权归原刊所有,全文请阅读原刊。

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