Developing an effective strategy to stabilize molecular interfaces at both charge-selective contacts of the devices
原文开头
at both charge-selective contacts of the devices, without sacrificing device efficiency, remains a key unmet challenge. Here, we show that multifunctional, property-tunable hafnium oxide (HfOx) interlayers, deposited by atomic layer deposition (ALD), can simultaneously sta- bilize both hole- and electron-selective molecular interfaces. Precise modulation of the fixed charge characteristics within the HfOx layer optimized carrier distribution and minimized interfacial recombina- tion losses, thereby enhancing device power conversion efficiency (PCE). Crucially, the HfOx layers also enabled robust interfacial an- choring, which governed long-term operational stability. …
摘自《科学》(Science)第391卷 第6788期 · 2026年2月26日。仅引用开头一小段供了解文章,版权归原刊所有,全文请阅读原刊。